Effect of Dy3+ and Eu3+ 4f Band Gap States on Luminescence and Energy Transfer in Monoclinic Lutetium Tungstate

被引:28
作者
Ding, Bangfu [1 ]
Yu, Ce [2 ]
Xin, Jiandi [2 ]
Yin, Luqiao [4 ]
Li, Zhaohua [1 ]
He, Qi [1 ]
Yu, Han [1 ]
Xu, Jingwei [1 ]
Zhao, Zhengui [3 ]
Zheng, Huibing [3 ]
Zhang, Junying [3 ]
Zheng, Shukai [1 ]
Han, Ya [5 ]
机构
[1] Hebei Univ, Key Lab Optoelect Informat Mat Hebei Prov, Coll Electron & Informat Engn, Baoding 071002, Peoples R China
[2] Hebei Univ, Coll Civil Engn & Architecture, Baoding 071002, Peoples R China
[3] Beihang Univ, Sch Phys, Beijing 100191, Peoples R China
[4] Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200444, Peoples R China
[5] Jiangsu Univ, Inst Agr Engn, Zhenjiang 212000, Peoples R China
关键词
monoclinic lutetium tungstate; rare earth ions; luminescence; 4f band gap state; energy transfer; LANTHANIDE AQUO IONS; ELECTRONIC-STRUCTURE; TUNABLE PHOTOLUMINESCENCE; PERSISTENT LUMINESCENCE; EMITTING PHOSPHORS; OPTICAL-PROPERTIES; CRYSTAL-STRUCTURE; MICROSTRUCTURES; LN(3+); LU2WO6;
D O I
10.1021/acsaelm.9b00115
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The 4f band gap states (BGSs) of Dy and Eu ions play an important role in luminescence and energy transfer in monoclinic Lu2WO6. The corresponding white and red light emissions were ascribed to electrons' transition from spin-down 4f states to BGSs and from BGSs to spin-up 4f states. The formation energy gradually increased or decreased with the increment of Dy or Eu content, indicating that Lu2WO6 easily introduced Eu with high concentration. Through fluorescence lifetime and Rietveld refinement, the exchange interaction energy migration mode from host to Dy and Eu ions was assumed to be electron transport from the conduction band (CB) to 4f states in the CB and 4f BGSs. From partial charge density and Bader charge analysis, electron transfer was supposed from Dy3+ BGS to Eu(3+ )BGS via dipole- dipole interaction in the codoping samples. The white, red, and pale red light-emitting diode (LED) lamps were fabricated using a 365 nm chip and the Dy3+/Eu3+-doped Lu2WO6. This research sheds light on the luminescence mechanism of rare-earth elements-doped Lu2WO6 and explores their potential application in lighting and displays.
引用
收藏
页码:772 / 782
页数:21
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