Effect of the Supporting Pattern on the Orientation of Hexagonal Morphology in Thin Films of Diblock Copolymers

被引:2
|
作者
Kriksin, Yu. A. [1 ]
Khalatur, P. G. [2 ]
Khokhlov, A. R. [3 ]
机构
[1] Russian Acad Sci, Inst Math Modeling, Moscow 125047, Russia
[2] Russian Acad Sci, Nesmeyanov Inst Organoelement Cpds, Moscow 119991, Russia
[3] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119899, Russia
基金
俄罗斯基础研究基金会;
关键词
ELECTRIC-FIELD ALIGNMENT; ORDER-DISORDER TRANSITION; BLOCK-COPOLYMER; MICROPHASE SEPARATION; SURFACE; NANOPATTERN; LITHOGRAPHY; EVOLUTION; SYSTEMS; MELTS;
D O I
10.1134/S0965545X10060118
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
The model of a thin film sandwiched between two parallel planes the gap between which is filled with the melt of diblock copolymers is revisited. One of the planes (a supporting plane) has a pattern, whereas the other plane (an upper) is uniform. The proposed model is based on mean self-consistent field concepts. The parameters of diblock copolymers are selected so that the melt of diblock copolymers yields a hexagonal morphology in its volume. The upper boundary of the film and support avoid contact with the minor component of the diblock copolymer; as a result, in the film, a hexagonal morphology parallel to the support is formed. When hexagonal and rectangular patterns with preferential interaction with the minor component (the period of patterns coincides with the period of hexagonal symmetry in the volume), the hexagonal morphology changes its orientation from parallel to perpendicular relative to the support. The hexagonal morphology changes its orientation at sufficiently strong interaction between the pattern and minor component. Structural factor is calculated, and characteristic features in the location of peaks for perpendicular and parallel phases of hexagonal morphology are found. The development of additional peaks in the structural factor comes from deformations induced by the interaction between components of the melt of diblock copolymers with the upper boundary, support, and pattern.
引用
收藏
页码:645 / 654
页数:10
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