Dielectric properties of sol-gel derived Ta2O5 thin films

被引：26
|
作者：
Yildirim, S
Ulutas, K [1 ]
Deger, D
Zayim, EO
Turhan, I
机构：
[1] Istanbul Univ, Dept Phys, Fac Sci, TR-34459 Istanbul, Turkey
[2] Istanbul Tech Univ, Dept Phys, Fac Sci & Letter, TR-34469 Maslak, Turkey
来源：
VACUUM | 2005年 / 77卷 / 03期
关键词：
Ta2O5; thin films; sol-gel; dielectric constant; dielectric loss and relaxation;
D O I：
10.1016/j.vacuum.2004.12.002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The dielectric constant and the dielectric loss of tantalum pentoxide (Ta2O5) thin films, produced by sol-gel spin-coated process on Corning glass substrates, have been investigated in the frequency range of 20-10(5) Hz and the temperature range of 183-403 K, using ohmic Al electrodes. The frequency and temperature dependence of relaxation time has also been determined. The capacitance and loss factor were found to decrease with increasing frequency and increase with increasing temperature. The activation energy values were evaluated and a good agreement between the activation energy values obtained from capacitance and dielectric loss factor measurements were observed. (c) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：329 / 335
页数：7
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