n-Type organic electrochemical transistors: materials and challenges

被引:162
作者
Sun, Hengda [1 ]
Gerasimov, Jennifer [1 ]
Berggren, Magnus [1 ]
Fabiano, Simone [1 ]
机构
[1] Linkoping Univ, Dept Sci & Technol, Lab Organ Elect, SE-60174 Norrkoping, Sweden
基金
瑞典研究理事会;
关键词
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; CHARGE-TRANSPORT; POLYMER; SEMICONDUCTORS; DIMENSIONALITY; DEVICE; LOGIC;
D O I
10.1039/c8tc03185a
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Organic electrochemical transistors (OECTs) have emerged as an enabling technology for the development of a variety of applications ranging from digital logic circuits to biosensors and artificial synapses for neuromorphic computing. To date, most of the reported OECTs rely on the use of p-type (hole transporting) conducting and semiconducting polymers as the channel material, while electron transporting (n-type) OECTs are yet immature, thus precluding the realization of advanced complementary circuitry. In this highlight, we review and discuss recent achievements in the area of n-type OECTs, in particular targeting recently reported n-type channel materials and how these have enabled a considerable advancement of OECT circuit capabilities. Further, the critical challenges currently limiting the performance of n-channel OECTs are summarized and discussed, setting material design guidelines for the next generation n-type and complementary OECTs.
引用
收藏
页码:11778 / 11784
页数:7
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