Selective ablation of AlN ceramic using femtosecond, nanosecond, and microsecond pulsed laser

被引:76
作者
Hirayama, Y [1 ]
Yabe, H [1 ]
Obara, M [1 ]
机构
[1] Keio Univ, Dept Elect & Elect Engn, Kouhoku Ku, Yokohama, Kanagawa 2238522, Japan
关键词
D O I
10.1063/1.1342805
中图分类号
O59 [应用物理学];
学科分类号
摘要
The microsecond, nanosecond, and femtosecond laser ablation of AlN ceramic with a transversely excited atmospheric (TEA) CO2 laser, KrF excimer laser, and Ti:sapphire laser is demonstrated. It is shown that the laser-induced thermal decomposition process occurs with a microsecond TEA CO2 laser and a nanosecond KrF excimer laser. With the microsecond and nanosecond laser-induced thermal decomposition process, the conductive aluminum line can be directly fabricated and very low resistance can be obtained with a TEA CO2 laser. In the case of femtosecond Ti:sapphire laser ablation, there are two different regimes of ablation rate-like metals. In addition, a nonthermal process without a chemical composition change of the ablated surface can be achieved successfully, which is evident from scanning electron microscopy observation and x-ray photoelectron spectroscopy analysis of the ablated surface. (C) 2001 American Institute of Physics.
引用
收藏
页码:2943 / 2949
页数:7
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