Characteristics of phosphorus-doped amorphous carbon films grown by rf plasma-enhanced CVD with a novel phosphorus solid target

Phosphorus-doped amorphous carbon (n-C:P) films were grown by r. f.-power-assisted plasma, enhanced chemical vapor deposition at room temperature using a novel solid red phosphorus target. The influence of phosphorus doping on material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, the solar cell properties such as series resistance, short circuit current density, open circuit current voltage, fill factor and conversion efficiency along with the spectral response are reported for the fabricated carbon-based n-C:P/p-Si heterojunction solar cell that was measured by standard measurement technique. The cells performances have been given in the dark I-V rectifying curve and I-V working curve under illumination when exposed to AM 1.5 illumination condition (100mW/cm(2), 25 degrees C). The maximum of open-circuit voltage (V-oc) and short-circuit current density (J(sc)) for the cells are observed to be approximately 236 V and 7.34 mA/cm(2) respectively for the n-C:P/p-Si cell grown at lower r. f. power of 100 W. The highest energy conversion efficiency (eta) and fill factor (FF) were found to be approximately 0.84% and 49%, respectively. We have observed that the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.