Effects of dissolved oxygen on electrochemical and semiconductor properties of 316L stainless steel

被引：79

作者：

Feng, Zhicao ^{[1
]}

Cheng, Xuequn ^{[1
]}

Dong, Chaofang ^{[1
]}

Xu, Lin ^{[1
]}

Li, Xiaogang ^{[1
]}

机构：

[1] Univ Sci & Technol Beijing, Ctr Corros & Protect, Beijing 100083, Peoples R China

来源：

JOURNAL OF NUCLEAR MATERIALS | 2010年 / 407卷 / 03期

关键词：

PASSIVE FILMS; ELECTRONIC-STRUCTURE; ANODIC ALUMINA; BORATE BUFFER; IMPEDANCE; VACANCIES; LAYER; NI;

D O I：

10.1016/j.jnucmat.2010.10.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of dissolved oxygen on the electrochemical behavior and semiconductor properties of passive film formed on 316L SS in three solutions with different dissolved oxygen were studied by using polarization curve, Mott-Schottky analysis and the point defect model (PDM). The results show that higher dissolved oxygen accelerates both anodic and cathodic process. Based on Mott-Schottky analysis and PDM, the key parameters for passive film, donor density N-d, flat-band potential E-fb and diffusivity of defects D-0 were calculated. The results display that N-d(1-7 x 10(27) m(-3)) and D-0(1-18 x 10(-16) cm(2)/s) increase and E-fb value reduces with the dissolved oxygen in solution. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：171 / 177

页数：7

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