Optical properties of InAs quantum dots with InAlAs/InGaAs composite matrix

被引：0
|
作者：
Liu, WS [1 ]
Chyi, JI [1 ]
机构：
[1] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan
来源：
2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings | 2004年
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of InAlAs/InGaAs composite overgrown layer on the optical properties of InAs quantum dots is investigated. Quantum dots with narrow photoluminescence linewidth and wide state-separation at 1.3 mu m can thus be obtained.
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页码：272 / 275
页数：4
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