Analysis of Self-Heating-Related Instability in Self-Aligned p-Channel Polycrystalline-Silicon Thin-Film Transistors

被引：16

作者：

Gaucci, P. ^{[1
]}

Valletta, A. ^{[1
]}

Mariucci, L. ^{[1
]}

Pecora, A. ^{[1
]}

Maiolo, L. ^{[1
]}

Fortunato, G. ^{[1
]}

机构：

[1] CNR, IMM, I-00133 Rome, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 08期

关键词：

Numerical simulations; polycrystalline silicon; self-heating effects; thin-film transistors (TFTs); BIAS TEMPERATURE INSTABILITY;

D O I：

10.1109/LED.2010.2051137

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-heating-related instabilities have been studied in p-channel polycrystalline-silicon thin-film transistors. The spatial distribution of the interface-state and fixed-oxide-charge densities generated during self-heating experiments has been analyzed and quantitatively determined by using negative-bias temperature stress experiments and 2-D numerical simulations. In addition, the observed asymmetry in the output characteristics with respect to source/drain contact reversal is also perfectly reproduced, confirming the validity of the proposed model.

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收藏

页码：830 / 832

页数：3

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