Interface State Density in Atomic Layer Deposited SiO2/β-Ga2O3 ((2)over-bar01) MOSCAPs

被引：98

作者：

Zeng, Ke ^{[1
]}

Jia, Ye ^{[1
]}

Singisetti, Uttam ^{[1
]}

机构：

[1] SUNY Buffalo, Univ Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 07期

关键词：

Gallium oxide; ALD silicon dioxide; interface state; conductance method; Terman method;

D O I：

10.1109/LED.2016.2570521

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The interface state density (D-it) at the interface between beta-Ga2O3 ((2) over bar 01) and atomic layer deposited (ALD) SiO2 dielectric is extracted using Terman method and conductance method. The effect of the different surface treatments on the extracted D-it was also studied. It is observed that the extracted D-it of 6 x 10(11) cm(-2)eV(-1) for the sample with no surface treatment is lower than hydrofluoric and hydrochloric acid treated samples. Low D-it sample shows narrow peak in the conductance method, suggesting a smooth interface. The extracted low D-it makes ALD SiO2 an attractive candidate for future Ga2O3 power devices.

引用

页码：906 / 909

页数：4

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