Effect of laser irradiation on structural and optical properties of thermally evaporated thin films of amorphous Cd5Se95-xZnx

被引:2
作者
Ahmad, Shabir [1 ]
Ganaie, Mohsin [1 ]
Khan, Mohd. Shahid [1 ]
Asokan, K. [2 ]
Zulfequar, M. [1 ]
机构
[1] Jamia Millia Islamia, Dept Phys, New Delhi 110025, India
[2] Inter Univ Accelerator Ctr, Mat Sci Div, New Delhi 110067, India
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2015年 / 170卷 / 01期
关键词
structural properties; optical properties; thin films of Cd5Se95-xZnx (x = 0; 2; 4); laser irradiation; INDUCED CRYSTALLIZATION; ELECTRICAL-PROPERTIES; TELLURIDE;
D O I
10.1080/10420150.2014.988621
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
Thin films of Cd5Se95-xZnx (x = 0, 2, 4) were deposited by a thermal evaporation technique on glass substrates. These films were irradiated by pulsed laser at different durations of time. Laser irradiation of Cd5Se95-xZnx (x = 0, 2, 4) was accompanied structural changes which in turn leads to the change in optical properties of the material. The X-ray diffraction pattern of Cd5Se95-xZnx (x = 0, 2, 4) shows that the grain size increases due to the addition of Zn and decreases after laser irradiation. It was also found that the value of dislocation density increases after laser irradiation. The surface morphology of laser-irradiated thin films of Cd5Se95-xZnx (x = 0, 2, 4) shows that the disorderness or defects are produced due to laser irradiation. Energy dispersive X-ray spectroscopy confirms the elemental composition of the ternary alloy of Cd5Se95-xZnx (x = 0, 2, 4). The optical constants of Cd5Se95-xZnx (x = 0, 2, 4) were calculated from optical transmission spectra. The value of optical band gap increases after laser irradiation and decreases due to the addition of Zn.
引用
收藏
页码:30 / 42
页数:13
相关论文
共 25 条
[1]   Structural, optical and electrical properties of laser irradiated Pb doped Ga-Se chalcogenide thin films [J].
Alvi, M. A. .
CURRENT APPLIED PHYSICS, 2013, 13 (03) :474-478
[2]   Effects of laser irradiation on optical properties of a-Se100-xTex thin films [J].
Bahishti, Adam A. ;
Husain, M. ;
Zulfequar, M. .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2011, 166 (07) :529-536
[3]  
Chokalingam M J, 1970, J PHYS D, V3, P1641, DOI DOI 10.1088/0022-3727/3/11/311
[4]   Study on the optoelectronic properties of amorphous selenium-based xerographic photoreceptors for electrophotography [J].
Chou, JC ;
Yang, SY ;
Wang, YS .
MATERIALS CHEMISTRY AND PHYSICS, 2003, 78 (03) :666-669
[5]   LASER-INDUCED CRYSTALLIZATION PHENOMENA IN GETE-BASED ALLOYS .1. CHARACTERIZATION OF NUCLEATION AND GROWTH [J].
COOMBS, JH ;
JONGENELIS, APJM ;
VANESSPIEKMAN, W ;
JACOBS, BAJ .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (08) :4906-4917
[6]   EFFECT OF LASER IRRADIATION ON STRUCTURAL, ELECTRICAL, AND OPTICAL-PROPERTIES OF P-MERCURY CADMIUM TELLURIDE [J].
DAWAR, AL ;
ROY, S ;
MALL, RP ;
MATHUR, PC .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) :3516-3520
[7]   Ag doped chalcogenide glasses and their applications [J].
Frumar, M ;
Wagner, T .
CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 2003, 7 (02) :117-126
[8]   Structural characterization and refractive index dispersion analysis of HgSe thin films grown by reactive solutions [J].
Girgis, S. Y. ;
Salem, A. M. ;
Selim, M. S. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (11)
[9]   Photosensitivity of As2S3 chalcogenide thin films at 1.5 μm [J].
Hô, N ;
Laniel, JM ;
Vallée, R ;
Villeneuve, A .
OPTICS LETTERS, 2003, 28 (12) :965-967
[10]   Swift heavy ion induced structural changes in CdS thin films possessing different microstructures: A comparative study [J].
Ison, V. V. ;
Rao, A. Ranga ;
Dutta, V. ;
Kulriya, P. K. ;
Avasthi, D. K. ;
Tripathi, S. K. .
JOURNAL OF APPLIED PHYSICS, 2009, 106 (02)