Controlled Growth of Large-Area Aligned Single-Crystalline Organic Nanoribbon Arrays for Transistors and Light-Emitting Diodes Driving

被引:25
作者
Wang, Wei [1 ]
Wang, Liang [1 ]
Dai, Gaole [1 ]
Deng, Wei [1 ]
Zhang, Xiujuan [1 ]
Jie, Jiansheng [1 ]
Zhang, Xiaohong [1 ]
机构
[1] Soochow Univ Suzhou, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
Large-area growth; Organic single-crystalline nanoribbon arrays; Organic field-effect transistors; Light-emitting diodes driving; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; HIGH-MOBILITY; ELECTRON-MOBILITY; SEMICONDUCTOR; PERFORMANCE; PHOTODETECTORS; MICRORIBBONS; FABRICATION; POLYMORPHS;
D O I
10.1007/s40820-017-0153-5
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Organic field-effect transistors (OFETs) based on organic micro-/nanocrystals have been widely reported with charge carrier mobility exceeding 1.0 cm(2) V-1 s(-1), demonstrating great potential for high-performance, low-cost organic electronic applications. However, fabrication of large-area organic micro-/nanocrystal arrays with consistent crystal growth direction has posed a significant technical challenge. Here, we describe a solution-processed dip-coating technique to grow large-area, aligned 9,10-bis(phenylethynyl) anthracene (BPEA) and 6,13-bis(triisopropylsilylethynyl) pentacene (TIPSPEN) single-crystalline nanoribbon arrays. The method is scalable to a 5 9 10 cm(2) wafer substrate, with around 60% of the wafer surface covered by aligned crystals. The quality of crystals can be easily controlled by tuning the dip-coating speed. Furthermore, OFETs based on well-aligned BPEA and TIPS-PEN single-crystalline nanoribbons were constructed. By optimizing channel lengths and using appropriate metallic electrodes, the BPEA and TIPS-PEN-based OFETs showed hole mobility exceeding 2.0 cm(2) V-1 s(-1) (average mobility 1.2 cm(2) V-1 s(-1)) and 3.0 cm(2) V-1 s(-1) (average mobility 2.0 cm(2) V-1 s(-1)), respectively. They both have a high on/off ratio (I-on/I-off)[10(9). The performance can well satisfy the requirements for light-emitting diodes driving.
引用
收藏
页码:1 / 11
页数:11
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