Improved thermoelectric properties of nanocrystalline hydrogenated silicon thin films by post-deposition thermal annealing

被引：13

作者：

Loureiro, Joana ^{[1
]}

Mateus, Tiago ^{[1
]}

Filonovich, Sergej ^{[1
]}

Ferreira, Marisa ^{[1
]}

Figueira, Joana ^{[1
]}

Rodrigues, Alexandra ^{[1
]}

Donovan, Brian F. ^{[2
]}

Hopkins, Patrick E. ^{[3
]}

Ferreira, Isabel ^{[1
]}

机构：

[1] Univ Nova Lisboa, i3N CENIMAT, Dept Mat Sci, Fac Sci & Technol, Campus Caparica, P-2829516 Caparica, Portugal

[2] US Naval Acad, Dept Phys, Annapolis, MD 21402 USA

[3] Univ Virginia, Dept Mech & Aerosp Engn, Charlottesville, VA 22904 USA

来源：

THIN SOLID FILMS | 2017年 / 642卷

基金：

欧盟地平线“2020”;

关键词：

Thermoelectric; Annealing; Chemical vapour deposition nc-Si:H; SOLAR-CELLS; GENERATION; DYNAMICS;

D O I：

10.1016/j.tsf.2017.09.047

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of post-deposition thermal annealing on the thermoelectric properties of n-and p-type nanocrystalline hydrogenated silicon thin films, deposited by plasma enhanced chemical vapour deposition, was studied in this work. The Power Factor of p-type films was improved from 7 x 10(-5) to 4 x 10(-4) W/(m.K-2) as the annealing temperature, under vacuum, increased up to 400 degrees C while for n-type films it has a minor influence. Optimized Seebeck coefficient values of 460 mu V/K and -320 mu V/K were achieved for p- and n-type films, respectively, with crystalline size in the range of 10 nm, leading to remarkable low thermal conductivity values (< 10 W.m(-1).K-1) at room temperature.

引用

页码：276 / 280

页数：5

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