High-performance, semiconducting membrane composed of ultrathin, single-crystal organic semiconductors

被引:39
作者
Makita, Tatsuyuki [1 ,2 ,3 ]
Kumagai, Shohei [1 ,2 ]
Kumamoto, Akihito [4 ]
Mitani, Masato [1 ,2 ]
Tsurumi, Junto [5 ]
Hakamatani, Ryohei [1 ,2 ]
Sasaki, Mari [1 ,2 ]
Okamoto, Toshihiro [1 ,2 ,3 ,6 ]
Ikuhara, Yuichi [4 ]
Watanabe, Shun [1 ,2 ,3 ,6 ]
Takeya, Jun [1 ,2 ,3 ,5 ]
机构
[1] Univ Tokyo, Grad Sch Frontier Sci, MIRC, Kashiwa, Chiba 2778561, Japan
[2] Univ Tokyo, Grad Sch Frontier Sci, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan
[3] Natl Inst Adv Ind Sci & Technol, AIST UTokyo Adv Operando Measurement Technol Open, Kashiwa, Chiba 2778561, Japan
[4] Univ Tokyo, Inst Engn Innovat, Bunkyo Ku, Tokyo 1138656, Japan
[5] NIMS, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan
[6] Japan Sci & Technol Agcy JST, Precursory Res Embryon Sci & Technol PRESTO, Saitama 3320012, Japan
基金
日本学术振兴会;
关键词
organic semiconductors; thin film transistor; organic single crystal; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; LARGE-AREA; CHARGE-TRANSPORT; HIGH-MOBILITY;
D O I
10.1073/pnas.1909932116
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Thin film transistors (TFTs) are indispensable building blocks in any electronic device and play vital roles in switching, processing, and transmitting electronic information. TFT fabrication processes inherently require the sequential deposition of metal, semiconductor, and dielectric layers and so on, which makes it difficult to achieve reliable production of highly integrated devices. The integration issues are more apparent in organic TFTs (OTFTs), particularly for solution-processed organic semiconductors due to limits on which underlayers are compatible with the printing technologies. We demonstrate a ground-breaking methodology to integrate an active, semiconducting layer of OTFTs. In this method, a solution-processed, semiconducting membrane composed of few-molecular-layer-thick single-crystal organic semiconductors is exfoliated by water as a self-standing ultrathin membrane on the water surface and then transferred directly to any given underlayer. The ultrathin, semiconducting membrane preserves its original single crystallinity, resulting in excellent electronic properties with a high mobility up to 12 cm(2). V-1.s(-1). The ability to achieve transfer of wafer-scale single crystals with almost no deterioration of electrical properties means the present method is scalable. The demonstrations in this study show that the present transfer method can revolutionize printed electronics and constitute a key step forward in TFT fabrication processes.
引用
收藏
页码:80 / 85
页数:6
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