Preparation and Characterization of Cu2ZnSnS4 Thin Films By Solvothermal Method

被引：0

作者：

Zhang, Wei ^{[1
]}

Zhang, Lina ^{[1
]}

Lu, Xiaodong ^{[1
]}

Wang, Qiushi ^{[1
]}

Yang, Xibao ^{[1
]}

Shi, Libin ^{[1
]}

Lun, Shuxian ^{[1
]}

机构：

[1] Bohai Univ, Coll New Energy, Jinzhou, Liaoning, Peoples R China

来源：

2013 CHINESE AUTOMATION CONGRESS (CAC) | 2013年

关键词：

Cu2ZnSnS4; thin films; polycrystalline; SOLAR-CELL; OPTICAL-PROPERTIES; CUINSE2; FABRICATION;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The Cu2ZnSnS4 thin films have been deposited onto FTO glass substrates by a simple solvothermal method. The films were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analyzer, and optical absorption spectroscopy technique, respectively. The influence of the annealing temperature on the structure, morphology, and composition of the films has been studied. The polycrystalline Cu2ZnSnS4 thin films crystallized in the tetragonal structure with nearly stoichiometric after annealing at 550 degrees C in Ar atmosphere for 1h. The analysis of the optical absorption data gave the bandgap energy to be 1.5 eV. The photoelectrochemical characterization showed that the annealed CZTS thin films behaved as p-type semiconductor photoelectrodes.

引用

页码：795 / 800

页数：6

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