Three-Dimensional Simulation of Focused Ion Beam Processing Using the Level Set Method

被引：11

作者：

Ertl, Otmar ^{[1
]}

Filipovic, Lado ^{[1
]}

Selberherr, Siegfried ^{[1
]}

机构：

[1] TU Wien, Inst Microelect, A-1040 Vienna, Austria

来源：

SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2010年

关键词：

FABRICATION; TECHNOLOGY;

D O I：

10.1109/SISPAD.2010.5604573

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Three-dimensional simulations of focused ion beam milling, which use the level set method for surface evolution, are presented for the first time. This approach allows the inherent description of topological changes. The surface rates are calculated using Monte Carlo ray tracing in order to incorporate shadowing as well as redeposition. Parallelization is used to reduce the computation time.

引用

页码：49 / 52

页数：4

共 17 条

[11] FRONTS PROPAGATING WITH CURVATURE-DEPENDENT SPEED - ALGORITHMS BASED ON HAMILTON-JACOBI FORMULATIONS [J].