A structural model of defects in β-Si3N4 produced by neutron irradiation

被引：14
作者：
Akiyoshi, M
Yano, T
Jenkins, ML
机构：
[1] Tokyo Inst Technol, Nucl Reactors Res Lab, Meguro Ku, Tokyo 1528550, Japan
[2] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
来源：
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 2001年 / 81卷 / 03期
关键词：
D O I：
10.1080/01418610108212167
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A high-resolution electron microscopy study has been carried out on a sintered beta -Si3N4 specimen which had been neutron irradiated to a dose of 2.8 x 10(26) neutrons m(-2) (E>0.1 MeV) at 793 K in the experimental fast reactor JOYO. The Burgers vector of the neutron-induced interstitial dislocation loops was found to be about 1/18 ((2) over bar4 (2) over bar9) (=1/6 (023)), corresponding to an extra layer of SiN4 tetrahedra inserted into the (10 (1) over bar0) planes. Based on image simulation and crystal chemical considerations, a suitable structural model for the observed defects has been deduced.
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收藏
页码：683 / 697
页数：15
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