On the nature of the 3.41 eV luminescence in hexagonal GaN

被引：81

作者：

Fischer, S ^{[1
]}

Steude, G

Hofmann, DM

Kurth, F

Anders, F

Topf, M

Meyer, BK

Bertram, F

Schmidt, M

Christen, J

Eckey, L

Holst, J

Hoffmann, A

Mensching, B

Rauschenbach, B

机构：

[1] Justus Liebig Univ, Inst Phys 1, D-35392 Giessen, Germany

[2] Univ Magdeburg, Inst Phys Expt, D-39106 Magdeburg, Germany

[3] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany

[4] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

gallium nitride; luminescence; exciton; ion damage;

D O I：

10.1016/S0022-0248(98)00194-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We studied the recombination at about 3.410 eV in nominally undoped GaN and highly oxygen-doped GaN by photoluminescence (PL) and cathodoluminescence (CL). For this line we find an upper limit for the thermal activation energy of E-A less than or equal to 21 +/- 3 meV. In time-resolved PL, lifetimes of 300-480 ps are observed indicating excitonic recombination. The defect giving rise to this emission can be created by Ar+ ion implantation. Tn conclusion, the 3.410 eV luminescence is attributed to excitons bound to structural defects in hexagonal GaN. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：556 / 560

页数：5

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