High temperature growth of the dilute nitride GaAsN using a nitrogen ECR plasma source

被引：0
作者：
Usher, Brian [1 ]
Warminski, Tadeus [1 ]
Dieing, Thomas [1 ]
Prince, Kathryn [2 ]
机构：
[1] La Trobe Univ, Dept Elect Engn, Bundoora, Vic 3086, Australia
[2] Australian Nucl Sci & Technol Org, Menai, NSW, Australia
来源：
2006 INTERNATIONAL CONFERENCE ON NANOSCIENCE AND NANOTECHNOLOGY, VOLS 1 AND 2 | 2006年
关键词：
dilute nitride; ECR plasma source; GaAsN; MBE; SIMS; XRD; photoluminescence;
D O I：
暂无
中图分类号：
R318 [生物医学工程];
学科分类号：
0831 ;
摘要：
The dilute nitride GaAsN has been grown by MBE using an ECR nitrogen plasma source. This has allowed growth at a substrate temperature of 600 degrees C, which in combination with an ion trap, has produced higher quality as-grown material. Layer chemistry has been assessed by SIMS, XRD and optical quality measured using photoluminescence.
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页码：537 / +
页数：2
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