Evaporated nanostructured Y2O3:Eu thin films

被引:11
作者
Hrudey, PCP [1 ]
Taschuk, M [1 ]
Tsui, YY [1 ]
Fedosejevs, R [1 ]
Sit, JC [1 ]
Brett, MJ [1 ]
机构
[1] Univ Alberta, Dept Elect & Comp Engn, Edmonton, AB T6G 2V4, Canada
关键词
glancing angle deposition; PVD; phosphors; thin film; photoluminescence;
D O I
10.1166/jnn.2005.051
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Europium-doped yttrium oxide (Y2O3:Eu) is a well-known luminescent material that in recent years has been studied in thin-film form. However, to date there has not been a great effort put into altering the nanostructure of these films. A thin-film deposition technique called glancing angle deposition allows for a high degree of control over the nanostructure of the thin film, resulting in thin films with nanostructure geometries ranging from chevron and post to helix. Glancing-angle deposition was used to make europium-doped yttrium oxide thin films with slanted-post nanostructures. Portions of the films were annealed in air at 850 degrees C for 10 hours following deposition. Scanning electron microscopy was used to characterize the nanostructures of the films, while UV laser excitation was used to characterize the photoluminescence properties of the films. The annealed samples exhibited increased photoluminescent responses compared to unannealed samples; however, the porous nanoscale geometry of the films was unaffected. In order to optimize the photoluminescence properties of the films, both the partial pressure of oxygen during film deposition and the level of europium doping in the source material used were varied. Films fabricated from the source material with a greater amount of europium doping had larger photoluminescent responses, while the optimal partial pressure of oxygen during electron-beam evaporation was found to be less than 1.0 x 10(-4) torr.
引用
收藏
页码:229 / 234
页数:6
相关论文
共 26 条
[1]  
Blasse G., 1994, LUMINESCENT MAT, DOI [10.1007/978-3-642-79017-1_1, DOI 10.1007/978-3-642-79017-1_1]
[2]  
Born M., 1999, principles of optics, V461, P401
[3]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[4]   Luminescence properties of spark-processed porous graphite [J].
Chang, SS .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 106 (01) :56-62
[5]   Comparison of photoluminescence behavior of porous germanium and spark-processed Ge [J].
Chang, SS ;
Hummel, RE .
JOURNAL OF LUMINESCENCE, 2000, 86 (01) :33-38
[6]   Luminescence behavior of pulsed laser deposited Eu:Y2O3 thin film phosphors on sapphire substrates [J].
Cho, KG ;
Kumar, D ;
Holloway, PH ;
Singh, RK .
APPLIED PHYSICS LETTERS, 1998, 73 (21) :3058-3060
[7]   Growth and characterization of Eu:Y2O3 thin-film phosphors on silicon and diamond-coated silicon substrates [J].
Cho, KG ;
Kumar, D ;
Jones, SL ;
Lee, DG ;
Holloway, PH ;
Singh, RK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (10) :3456-3462
[8]   The integration of nanoscale porous silicon light emitters: materials science, properties, and integration with electronic circuitry [J].
Fauchet, PM .
JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) :53-64
[9]   A novel probe for near field optical microscopy based on luminescent silicon [J].
Gottlich, H ;
Heckl, WM .
ULTRAMICROSCOPY, 1995, 61 (1-4) :145-153
[10]   High-speed porous thin film humidity sensors [J].
Harris, KD ;
Huizinga, A ;
Brett, MJ .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2002, 5 (11) :H27-H29