Creep deformation of single crystals of binary and some ternary MoSi2 with the C11b structure

被引：26

作者：

Inui, H ^{[1
]}

Ishikawa, K ^{[1
]}

Yamaguchi, M ^{[1
]}

机构：

[1] Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan

来源：

INTERMETALLICS | 2000年 / 8卷 / 9-11期

基金：

日本学术振兴会;

关键词：

molybdenum silicides; creep; microalloying; single-crystal growth; defects; dislocation geometry and arrangement;

D O I：

10.1016/S0966-9795(00)00055-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The creep deformation behavior of binary and some ternary MoSi2 single crystals with the soft [0 15 1] and hard [001] orientations has been investigated in the temperature range from 1200 to 1400 degreesC in compression. The alloying elements studied include Nb and Al that form a C40 disilicide with Si and W and Re that form a C11(b) disilicide with Si. The creep strain rate for the [001] orientation is significantly (2 orders of magnitude) lower than that for the soft [0 15 1] orientation. The creep strain rate for the [0 15 1] orientation is improved by an order magnitude upon alloying with Re and Nb while alloying with W and Al causes a decline in the creep properties of this orientation. The creep strain rate for the [001] orientation is further improved upon alloying with Re, Nb, W and Al with the extent of improvement significantly larger for the Re addition. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：1159 / 1168

页数：10

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