Creep deformation of single crystals of binary and some ternary MoSi2 with the C11b structure

被引：26
作者：
Inui, H [1 ]
Ishikawa, K [1 ]
Yamaguchi, M [1 ]
机构：
[1] Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
来源：
INTERMETALLICS | 2000年 / 8卷 / 9-11期
基金：
日本学术振兴会;
关键词：
molybdenum silicides; creep; microalloying; single-crystal growth; defects; dislocation geometry and arrangement;
D O I：
10.1016/S0966-9795(00)00055-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The creep deformation behavior of binary and some ternary MoSi2 single crystals with the soft [0 15 1] and hard [001] orientations has been investigated in the temperature range from 1200 to 1400 degreesC in compression. The alloying elements studied include Nb and Al that form a C40 disilicide with Si and W and Re that form a C11(b) disilicide with Si. The creep strain rate for the [001] orientation is significantly (2 orders of magnitude) lower than that for the soft [0 15 1] orientation. The creep strain rate for the [0 15 1] orientation is improved by an order magnitude upon alloying with Re and Nb while alloying with W and Al causes a decline in the creep properties of this orientation. The creep strain rate for the [001] orientation is further improved upon alloying with Re, Nb, W and Al with the extent of improvement significantly larger for the Re addition. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1159 / 1168
页数：10
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