InGaN-based 518 and 488nm laser diodes on c-plane GaN substrate

We succeeded in fabricating InGaN-based laser diodes (LDs) with a wavelength of 518 and 488 nm under continuous wave (cw) operation. The both LDs structures were grown on conventional c-plane GaN substrates by metal organic chemical vapor deposition (MOCVD). The threshold current and threshold voltage were 45 mA and 5.5 V at 518 nm, 30 mA and 4.5 Vat 488 nm, respectively. The lifetime test of these LDs was carried out under high driving temperature up to 80 C in cw operation. Lifetime was estimated to be over 5000h with an optical output power of 5 mW at 80 degrees C in 515-518 nm LDs from 1000 h operation, and was estimated to be over 10,000 h with an output power of 60 mW at 60 degrees C in 488 nm LDs from 2000 h operation. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim