Pressure-Dependent Optical and Vibrational Properties of Mono layer Molybdenum Disulfide

被引:308
作者
Nayak, Avinash P. [1 ]
Pandey, Tribhuwan [2 ]
Voiry, Damien [3 ]
Liu, Jin [4 ]
Moran, Samuel T. [1 ]
Sharma, Ankit [1 ]
Tan, Cheng [1 ]
Chen, Chang-Hsiao [6 ]
Li, Lain-Jong [7 ]
Chhowalla, Manish [3 ]
Lin, Jung-Fu [4 ,5 ]
Singh, Abhishek K. [2 ]
Akinwande, Deji [1 ]
机构
[1] Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78712 USA
[2] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India
[3] Rutgers State Univ, Dept Mat Sci & Engn, Piscataway Township, NJ 08854 USA
[4] Univ Texas Austin, Dept Geol Sci, Austin, TX 78712 USA
[5] Ctr High Pressure Sci & Technol Adv Res HPSTAR, Shanghai 201900, Peoples R China
[6] Inst Atom & Mol Sci, Taipei 10617, Taiwan
[7] KAUST, Phys Sci & Engn Div, Thuwal 23955, Saudi Arabia
基金
美国国家科学基金会;
关键词
2D Materials; Diamond Anvil Cell; Hydrostatic Pressure; MoS2; Photoluminescence; Pressure Engineering; Strain; Transition Metal Dichalcogenide; MOS2; TRANSITION; MONOLAYER; GRAPHENE; DYNAMICS;
D O I
10.1021/nl5036397
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Controlling the band gap by tuning the lattice structure through pressure engineering is a relatively new route for tailoring the optoelectronic properties of two-dimensional (2D) materials. Here, we investigate the electronic structure and lattice vibrational dynamics of the distorted monolayer 1T-MoS2 (1T') and the monolayer 2H-MoS2 via a diamond anvil cell (DAC) and density functional theory (DFT) calculations. The direct optical band gap of the monolayer 2H-MoS2 increases by 11.7% from 1.85 to 2.08 eV, which is the highest reported for a 2D transition metal dichalcogenide (TMD) material. DFT calculations reveal a subsequent decrease in the band gap with eventual metallization of the monolayer 2H-MoS2, an overall complex structureproperty relation due to the rich band structure of MoS2. Remarkably, the metastable 1T'-MoS2 metallic state remains invariant with pressure, with the J(2), A(1g), and E(2)g modes becoming dominant at high pressures. This substantial reversible tunability of the electronic and vibrational properties of the MoS2 family can be extended to other 2D TMDs. These results present an important advance toward controlling the band structure and optoelectronic properties of monolayer MoS2 via pressure, which has vital implications for enhanced device applications.
引用
收藏
页码:346 / 353
页数:8
相关论文
共 45 条
[1]   X-ray diffraction study of molybdenum diselenide to 35.9 GPa [J].
Aksoy, Resul ;
Selvi, Emre ;
Ma, Yanzhang .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2008, 69 (09) :2138-2140
[2]   Mechanically Induced Metal Insulator Transition in Carbyne [J].
Artyukhov, Vasilii I. ;
Liu, Mingjie ;
Yakobson, Boris I. .
NANO LETTERS, 2014, 14 (08) :4224-4229
[3]   Effect of Pressure and Temperature on Structural Stability of MoS2 [J].
Bandaru, Nirup ;
Kumar, Ravhi S. ;
Sneed, Daniel ;
Tschauner, Oliver ;
Baker, Jason ;
Antonio, Daniel ;
Luo, Sheng-Nian ;
Hartmann, Thomas ;
Zhao, Yusheng ;
Venkatt, Rama .
JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (06) :3230-3235
[4]   Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides [J].
Bhattacharyya, Swastibrata ;
Singh, Abhishek K. .
PHYSICAL REVIEW B, 2012, 86 (07)
[5]   Strain engineering the properties of graphene and other two-dimensional crystals [J].
Bissett, Mark A. ;
Tsuji, Masaharu ;
Ago, Hiroki .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2014, 16 (23) :11124-11138
[6]   PROJECTOR AUGMENTED-WAVE METHOD [J].
BLOCHL, PE .
PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979
[7]   The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2 [J].
Buscema, Michele ;
Steele, Gary A. ;
van der Zant, Herre S. J. ;
Castellanos-Gomez, Andres .
NANO RESEARCH, 2014, 7 (04) :561-571
[8]   Chemically exfoliated single-layer MoS2: Stability, lattice dynamics, and catalytic adsorption from first principles [J].
Calandra, Matteo .
PHYSICAL REVIEW B, 2013, 88 (24)
[9]   Local Strain Engineering in Atomically Thin MoS2 [J].
Castellanos-Gomez, Andres ;
Roldan, Rafael ;
Cappelluti, Emmanuele ;
Buscema, Michele ;
Guinea, Francisco ;
van der Zant, Herre S. J. ;
Steele, Gary A. .
NANO LETTERS, 2013, 13 (11) :5361-5366
[10]   High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems [J].
Chang, Hsiao-Yu ;
Yang, Shixuan ;
Lee, Jongho ;
Tao, Li ;
Hwang, Wan-Sik ;
Jena, Debdeep ;
Lu, Nanshu ;
Akinwande, Deji .
ACS NANO, 2013, 7 (06) :5446-5452