AlGaN/GaN HFETs fabricated from maskless selectively grown mesas on Si(111) substrates

被引：3

作者：

Bardwell, J. A. ^{[1
]}

Haffouz, S. ^{[1
]}

Kochtane, A. ^{[1
]}

Lester, T. ^{[1
]}

Storey, C. ^{[1
]}

Tang, H. ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 22期

关键词：

D O I：

10.1049/el:20072039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN heterostructure field effect transistors (HFETS) fabricated from maskless selectively grown mesas by ammonia molecular beam epitaxy on Si(I 11) substrates arc demonstrated, With 0.8 Pan gate length, the devices exhibited maximum drain current and trans-conductance ot 425 mA/mm and 140 mS/mm, respectively. Values of f(T) and f(MAX) of 8 and 19 GHz, respectively, were obtained from RF measurements. A 50 nm-thick SiNx passivation layer was found to be very effective in mitigating the current collapse.

引用

页码：1230 / 1231

页数：2

共 5 条

[1] Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si (111) exceeding 1 μm in thickness [J].

Dadgar, A ;

Bläsing, J ;

Diez, A ;

Alam, A ;

Heuken, M ;

Krost, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (11B) :L1183-L1185

[2] AlGaN/GaN HEMTs on Si substrate with 7 W/mm output power density at 10 GHz [J].

Dumka, DC ;

Lee, C ;

Tserng, HQ ;

Saunier, P ;

Kumar, M .

ELECTRONICS LETTERS, 2004, 40 (16) :1023-1024

[3] Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy [J].

Feltin, E ;

Beaumont, B ;

Laügt, M ;

de Mierry, P ;

Vennéguès, P ;

Lahrèche, H ;

Leroux, M ;

Gibart, P .

APPLIED PHYSICS LETTERS, 2001, 79 (20) :3230-3232

[4]

HAFFOUZ S, 2006, APPL PHYS LETT, V88

[5]

Tang H., 2006, APPL PHYS LETT, V88

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