Ultrahigh External Quantum Efficiency from Thin SnO2 Nanowire Ultraviolet Photodetectors

被引：285
作者：
Hu, Linfeng [1 ]
Yan, Jian [2 ]
Liao, Meiyong [3 ]
Wu, Limin [1 ]
Fang, Xiaosheng [1 ]
机构：
[1] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
[2] Nanyang Technol Univ, Temasek Labs, Singapore 637553, Singapore
[3] Natl Inst Mat Sci, Sensor Mat Ctr, Tsukuba, Ibaraki 3050044, Japan
来源：
SMALL | 2011年 / 7卷 / 08期
基金：
中国国家自然科学基金;
关键词：
TIN OXIDE; ZNS NANOBELTS; LIGHT SENSORS; GAN; PHOTOCURRENT; MECHANISMS; GROWTH;
D O I：
10.1002/smll.201002379
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Thin SnO2 nanowires with uniform diameter and large surface-to-volume ratio are synthesized, and a single wire is used to fabricate a high-performance UV photodetector. An ultrahigh external quantum efficiency of 1.32 A× 107 is achieved, which is about four orders of magnitude larger than that of conventional SnO2 photodetectors. © 2011 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1012 / 1017
页数：6
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