Pulsed PMOS Sense Amplifier for High Speed Single-Ended SRAM

被引：0

作者：

Park, Juhyun ^{[1
]}

Jeong, Hanwool ^{[1
]}

Jung, Seong-Ook ^{[1
]}

机构：

[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul, South Korea

来源：

2018 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC) | 2018年

关键词：

8T SRAM; sense amplifier; single-ended read operation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a pulsed pMOS sense amplifier for single-ended static random access memory (SRAM) at low supply voltage is proposed. Domino logic for single-ended SRAM such as 8T SRAA4 has a large read delay because a large read bitline swing is required. To improve read delay, previously proposed pseudo nMOS based sense amplifier was proposed. However, it has a large static current, which causes a large energy consumption. With 22nm FinFET technology, the proposed pulsed pMOS sense amplifier improves read delay by about 80% compared with conventional domino logic and reduces energy consumption by 40% compared with previously proposed pseudo nMOS based sense amplifier.

引用

页码：56 / 59

页数：4

共 4 条

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