Very low 1/f noise at room temperature in fully epitaxial Fe/MgO/Fe magnetic tunnel junctions

被引：41

作者：

Aliev, F. G. ^{[1
]}

Guerrero, R.

Herranz, D.

Villar, R.

Greullet, F.

Tiusan, C.

Hehn, M.

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, Spain

[2] Nancy Univ, CNRS, Phys Mat Lab, UMR, F-54506 Nancy, France

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 23期

关键词：

D O I：

10.1063/1.2822812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on room temperature 1/f noise in fully epitaxial Fe (45 nm)/MgO (2.6 nm)/Fe (10 nm) magnetic tunnel junctions (MTJs) with and without carbon doping of the Fe/MgO bottom interface. We have found that the normalized noise (Hooge factor) asymmetry between parallel and antiparallel states may strongly depend on the applied bias and its polarity. Both types of MTJs exhibit record of low Hooge factors being at least one order of magnitude smaller than previously reported. (c) 2007 American Institute of Physics.

引用

页数：3

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