Optimization of the structural and optical properties of ZnS epilayers grown on (100)GaAs by MOVPE

被引：12
作者：
Leo, G
Lovergine, N
Prete, P
Longo, M
Cingolani, R
Mancini, AM
Romanato, F
Drigo, AV
机构：
[1] UNIV LECCE,INFM,DIPARTIMENTO SCI MAT,I-73100 LECCE,ITALY
[2] UNIV PADUA,INFM,DIPARTIMENTO FIS G GALILEI,I-35131 PADUA,ITALY
[3] CNR,IME,I-73100 LECCE,ITALY
来源：
JOURNAL OF CRYSTAL GROWTH | 1996年 / 159卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(95)00859-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The crystalline and optical quality of ZnS epilayers grown on (100)GaAs by MOVPE was investigated by channeling-RBS, 10 K photoluminescence and absorption spectroscopy for different growth conditions. The measurements point out that the crystalline and optical quality of the epilayers strongly depends on the VI/II precursor vapor phase stoichiometry as well as on GaAs surface treatments before the growth. Optimized MOVPE growth conditions have been determined.
引用
收藏
页码：144 / 147
页数：4
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