Optimization of the structural and optical properties of ZnS epilayers grown on (100)GaAs by MOVPE

被引：12

作者：

Leo, G

Lovergine, N

Prete, P

Longo, M

Cingolani, R

Mancini, AM

Romanato, F

Drigo, AV

机构：

[1] UNIV LECCE,INFM,DIPARTIMENTO SCI MAT,I-73100 LECCE,ITALY

[2] UNIV PADUA,INFM,DIPARTIMENTO FIS G GALILEI,I-35131 PADUA,ITALY

[3] CNR,IME,I-73100 LECCE,ITALY

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 159卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00859-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The crystalline and optical quality of ZnS epilayers grown on (100)GaAs by MOVPE was investigated by channeling-RBS, 10 K photoluminescence and absorption spectroscopy for different growth conditions. The measurements point out that the crystalline and optical quality of the epilayers strongly depends on the VI/II precursor vapor phase stoichiometry as well as on GaAs surface treatments before the growth. Optimized MOVPE growth conditions have been determined.

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收藏

页码：144 / 147

页数：4

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