Electronic properties of nitrogen diluted hydrogenated amorphous carbon films

被引：0

作者：

Kumar, S ^{[1
]}

Dixit, PN ^{[1
]}

Sarangi, D ^{[1
]}

Bhattacharyya, R ^{[1
]}

机构：

[1] Natl Phys Lab, Thin Film Technol Grp, New Delhi 110012, India

来源：

PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nitrogen doped hydrogenated amorphous carbon films were grown in an asymmetric RF-PECVD plasma system. Electrical conductivity, Urbach energy, optical bandgap, refractive index, and stress have been studied as a function of nitrogen partial pressure. Films deposited at high nitrogen partial pressure (58%) exhibits about four order of magnitude higher conductivity than film deposited without nitrogen.

引用

页码：1200 / 1203

页数：4

共 50 条

[1] Electronic properties and doping of hydrogenated tetrahedral amorphous carbon films
Conway, NMJ
Milne, WI
Robertson, J
DIAMOND AND RELATED MATERIALS, 1998, 7 (2-5) : 477 - 481
[2] Nitrogen modification of hydrogenated amorphous carbon films
Silva, SRP
Robertson, J
Amaratunga, GAJ
Rafferty, B
Brown, LM
Schwan, J
Franceschini, DF
Mariotto, G
JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) : 2626 - 2634
[3] PROPERTIES OF NITROGEN-DOPED AMORPHOUS HYDROGENATED CARBON-FILMS
AMIR, O
KALISH, R
JOURNAL OF APPLIED PHYSICS, 1991, 70 (09) : 4958 - 4962
[4] MICROSTRUCTURES AND MECHANICAL-PROPERTIES OF AMORPHOUS HYDROGENATED CARBON-NITROGEN FILMS
SCHWAN, J
DWORSCHAK, W
JUNG, K
EHRHARDT, H
DIAMOND AND RELATED MATERIALS, 1994, 3 (07) : 1034 - 1039
[5] Physical and electrical properties of nitrogen-doped hydrogenated amorphous carbon films
Fenker, M.
Julin, J.
Petrikowski, K.
Richter, A.
VACUUM, 2019, 162 : 8 - 14
[6] A study of the effects of nitrogen incorporation and annealing on the properties of hydrogenated amorphous carbon films
Khan, RUA
Burden, AP
Silva, SRP
Shannon, JM
Sealy, BJ
CARBON, 1999, 37 (05) : 777 - 780
[7] Transport and optical properties of amorphous carbon and hydrogenated amorphous carbon films
Tibrewala, A.
Peiner, E.
Bandorf, R.
Biehl, S.
Luethje, H.
APPLIED SURFACE SCIENCE, 2006, 252 (15) : 5387 - 5390
[8] Electrochemical properties of amorphous nitrogen-containing hydrogenated diamondlike-carbon films
Yu. V. Pleskov
M. D. Krotova
V. I. Polyakov
A. V. Khomich
A. I. Rukovishnikov
B. L. Druz
I. M. Zaritskii
Russian Journal of Electrochemistry, 2000, 36 : 1008 - 1013
[9] Electrochemical properties of amorphous nitrogen-containing hydrogenated diamondlike-carbon films
Pleskov, YV
Krotova, MD
Polyakov, VI
Khomich, AV
Rukovishnikov, AI
Druz, BL
Zaritskii, IM
RUSSIAN JOURNAL OF ELECTROCHEMISTRY, 2000, 36 (09) : 1008 - 1013
[10] Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon films
Ray, SC
Bao, CW
Tsai, HM
Chiou, JW
Jan, JC
Kumar, KPK
Pong, WF
Tsai, MH
Wang, WJ
Hsu, CJ
Okpalugo, TIT
Papakonstantinou, P
McLaughlin, JA
APPLIED PHYSICS LETTERS, 2004, 85 (18) : 4022 - 4024

← 1 2 3 4 5 →