Growth and characterizations of bulk ZnSe single crystal by chemical vapor transport

The bulk ZnSe single crystal was grown from the vapor by Zn(NH4)(3)Cl-5 transport from ZnSe polycrystals source, which was synthesized from commercial grade high-purity elements, selenium and zinc. The growth temperature between the source and the growing ZnSe single crystal was 898-915degreesC and the temperature difference of the growth tube was 14-18degreesC. The orange ZnSe single crystal of Phi9 x 25 mm was obtained. The studies on the features and habit of the growth surface show that the growth surface of as-grown ZnSe crystal was composed of {1 1 1} and {1 0 0} faces. The crystal quality of ZnSe crystal was investigated by RO-XRD. The FWHM value of RO-XRD patterns of ZnSe (1 1 1) face is 24 s. The photoluminescence spectrum is dominated by two broad peaks located at 439 and 418 nm, respectively. The etch pit density is about (5-7) x 10(4) cm(-2). The absorption edge is very sharp and is located at about 465 nm. All of the above results indicate that a ZnSe single crystal with high crystalline quality and high purity can be grown from the vapor by Zn(NH4)(3)Cl-5 transport. (C) 2003 Elsevier B.V. All rights reserved.