Research of etching process of Al0.8Sc0.2N based on ICP etching equipment

被引：4

作者：

Wang, Xiaoyi ^{[1
,2
]}

Lin, Wenkui ^{[2
,3
]}

Yun, Xiaofan ^{[2
,4
]}

Zha, Qiang ^{[2
]}

Li, Haiou ^{[1
]}

Zhang, Baoshun ^{[2
]}

机构：

[1] Guilin Univ Elect Technol, Guangxi Key Lab Precis Nav Technol & Applicat, Guilin, Guangxi, Peoples R China

[2] Chinese Acad Sci, Key Lab Multifunct Nanomat & Smart Syst, Suzhou Inst Nanotech & Nanobion, Suzhou, Peoples R China

[3] Univ Sci & Tech China, Sch Nanotech & Nanobion, Hefei, Peoples R China

[4] Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Nanjing, Peoples R China

来源：

2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年

关键词：

AlScN; Etching; ICP; Cl-2 and BCl3;

D O I：

10.1109/EDTM50988.2021.9420949

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Etching process is the basis of fabrication of AlScN piezoelectric devices. The mechanism of etching Al0.8Sc0.2N film by inductively coupled plasma etching machine was studied. When the gas flow rates of BCl3/Ar at 80/5 sccm, and the tray temperature was 293 K, the etching selectivity ratio of Al0.8Sc0.2N to photoresist was 0.7: 1, and the etching rate was 79 nm/min, the etching inclination angle is 20.2 degrees, and the etching surface roughness is 1.28 nm , which can meet the application of piezoelectric devices based on AlScN thin films.

引用

页数：3

共 3 条

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[2]

James R, 2019, J PHYS C SERIES, P1407

[3] Characteristics of inductively coupled Cl2/BCl3 plasmas during GaN etching [J].

Kim, HS ;

Yeom, GY ;

Lee, JW ;

Kim, TI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1999, 17 (04) :2214-2219

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