Glancing-angle ion-assisted deposition of ZnO thin films

被引：10

作者：

Ruthe, KC ^{[1
]}

Barnett, SA ^{[1
]}

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

来源：

SURFACE SCIENCE | 2003年 / 538卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

zinc oxide; sputter deposition; ion bombardment; atomic force microscopy; surface structure; morphology; roughness; and topography; electron microscopy; X-ray scattering; diffraction; and reflection;

D O I：

10.1016/S0039-6028(03)00601-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Undoped ZnO thin films were deposited on unheated sapphire and glass substrates under concurrent glancing-angle Ar+ ion bombardment. Surface roughness decreased from 18 to 3.5 nm in films grown on glass, and from 11 to 0.5 nm on sapphire, as the ion-to-neutral atom ratio increased from 0 to 0.25. Film microstructure observations by cross-sectional electron microscopy indicated increased film density when glancing-angle ions were used. The glancing-angle ions had little effect on film residual stress; this is in contrast to normal-incidence ion bombardment that typically increases compressive stresses. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：L460 / L464

页数：5

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