L-Band 1000W Single-Chip Internally Matched GaN Amplifier

被引：0

作者：

Zhong, Shichang ^{[1
,2
]}

Yin, Xiaoxing ^{[1
]}

Chen, Tangshen ^{[2
]}

Huang, Dan ^{[2
]}

机构：

[1] Southeast Univ, State Key Lab Millimeter Wave, Nanjing 210096, Jiangsu, Peoples R China

[2] Nanjing Elect Devices Inst, Natl Key Lab Monolith Integrated Circuits & Modul, POB 1601, Nanjing 210016, Jiangsu, Peoples R China

来源：

2019 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS 2019) | 2019年

关键词：

GaN; single-chip; HEMT; internally matched; L-band; amplifier;

D O I：

10.1109/ieee-iws.2019.8803859

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, A L-Band single-chip internallymatched AlGaN/GaN amplifier has been developed. The gate-periphery of the GaN HEMT is 55mm. The input and output matching circuit with the GaN chip are integrated in a 17.4mmx24mm ceramic package. The internally matched amplifier has demonstrated the pulse output power of over 1000W, power density of 18W/mm and the power gain of 18dB across the 1.25GHz to 1.35GHz with the voltage of 80V, and the max power added efficiency is 71.4% under the pulse condition at a duty of 1% with a pulse width of 5 mu s. This is the highest combination of output power, power gain and PAE from a single-chip AlGaN/GaN HEMT at L band.

引用

页数：3

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