Electrical and structural properties of Ce0.9CoFe3Sb12 thermoelectric thin films

被引：12

作者：

Arnache, O

Giratá, D

Pérez, F

Castro, LF

Prieto, P

Lopera, W

机构：

[1] Univ Valle, Dept Phys, Cali, Colombia

[2] Univ Antioquia, Inst Phys, Cali, Colombia

来源：

SOLID STATE COMMUNICATIONS | 2005年 / 133卷 / 05期

关键词：

filled skutterudites; thin films; sputtering; thermoelectric properties;

D O I：

10.1016/j.ssc.2004.07.068

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this work, we show experimental results for growth conditions of thermoelectric Ce0.9CoFe3Sb12 thin films. An rf-magnetron sputtering system has been used to grow the films on single crystal substrates of sapphire (Al2O3), silicon (Si), and magnesium oxide (MgO) at different substrate temperatures between 250 and 450 degreesC. The films were thermoelectrically characterized with resistivity and thermopower measurements as functions of temperature. The results show linear behavior of resistivity with temperature, and thermopower growth with the temperature increase. Such behavior is typical for metallic materials. The structure and surface morphology of the samples were analyzed by X-ray diffraction pattern and atomic force microscopy (AFM), respectively. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：343 / 346

页数：4

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