Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing

被引：102

作者：

Hanyu, Takahiro ^{[1
,2
,3
]}

Endoh, Tetsuo ^{[2
,3
,4
]}

Suzuki, Daisuke ^{[1
,2
,5
]}

Koike, Hiroki ^{[3
]}

Ma, Yitao ^{[3
]}

Onizawa, Naoya ^{[1
,2
,5
]}

Natsui, Masanori ^{[1
,2
]}

Ikeda, Shoji ^{[2
,3
]}

Ohno, Hideo ^{[1
,2
,3
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 9807577, Japan

[2] Tohoku Univ, Ctr Spintron Integrated Syst, Sendai, Miyagi 9808577, Japan

[3] Tohoku Univ, Ctr Innovat Integrated Elect Syst, Sendai, Miyagi 9800845, Japan

[4] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan

[5] Tohoku Univ, Frontier Res Inst Interdisciplinary Sci, Sendai, Miyagi 9808578, Japan

来源：

PROCEEDINGS OF THE IEEE | 2016年 / 104卷 / 10期

基金：

日本科学技术振兴机构;

关键词：

Field-programmable gate array; image recognition; logic-in-memory architecture; magneto-resistive RAM; microcontroller unit (MCU); MTJ device; MTJ/MOS-hybrid circuit; nonvolatile LSI; power gating; standby power; ternary content-addressable memory; RECOGNITION PROCESSOR; NEURAL-NETWORKS; DOMAIN-WALL; MEMORY; LOGIC; DEVICES; MAGNETORESISTANCE; ANISOTROPY; DESIGN; ENGINE;

D O I：

10.1109/JPROC.2016.2574939

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nonvolatile spintronic devices have potential advantages, such as fast read/write and high endurance together with back-end-of-the-line compatibility, which offers the possibility of constructing not only stand-alone RAMs and embedded RAMs that can be used in conventional VLSI circuits and systems but also standby-power-free high-performance nonvolatile CMOS logic employing logic-in-memory architecture. The advantages of employing spintronic devices, especially magnetic tunnel junction (MTJ) devices with CMOS circuits, are discussed, and the current status of the MTJ-based VLSI computing paradigm is presented along with its prospects and remaining challenges.

引用

页码：1844 / 1863

页数：20

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