Studies on switching mechanisms in Pd-nanodot embedded Nb2O5 memristors using scanning tunneling microscopy

被引：25

作者：

Hota, M. K. ^{[1
]}

Bera, M. K. ^{[1
]}

Verma, S. ^{[2
]}

Maiti, C. K. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect & Elect Commun Engn, VLSI Engn Lab, Kharagpur 721302, W Bengal, India

[2] Inst Phys, Bhubaneswar 751005, Orissa, India

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 21期

关键词：

Memristor; STM; Nb2O5; MEMORY;

D O I：

10.1016/j.tsf.2012.07.026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Current imaging tunneling spectrum obtained from scanning tunneling microscopy has been used to probe the formation and/or rupture of conductive filaments responsible for bipolar switching in Pd nano-dots embedded Nb2O5 memristors. Filamentary conduction mechanism has been confirmed by scanning tunneling microscopy study using a Pt-Ir tip that enabled performing electroforming and reset operations at the nanoscale. The back and forth transition between the fully oxidized and metallic sub-oxide states of niobium under applied bias, as observed from X-ray photoelectron spectroscopy, is believed to be the source of bipolar switching in Nb2O5 memristors. The incorporation of Pd nanodots in Nb2O5 matrix plays a critical role by acting as an oxygen ion reservoir and/or by polarizing a large volume of oxygen vacancies. The formation and/or rupture of the conducting filaments through trapping-detrapping phenomena are found to boost the memristive switching performance. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：6648 / 6652

页数：5

共 25 条

[1]

[Anonymous], IEEE T ELECT DEVICES

[2] 'Memristive' switches enable 'stateful' logic operations via material implication [J].

Borghetti, Julien ;

Snider, Gregory S. ;

Kuekes, Philip J. ;

Yang, J. Joshua ;

Stewart, Duncan R. ;

Williams, R. Stanley .

NATURE, 2010, 464 (7290) :873-876

[3] MEMRISTOR - MISSING CIRCUIT ELEMENT [J].

CHUA, LO .

IEEE TRANSACTIONS ON CIRCUIT THEORY, 1971, CT18 (05) :507-+

[4] Nanoscale memory devices [J].

Chung, Andy ;

Deen, Jamal ;

Lee, Jeong-Soo ;

Meyyappan, M. .

NANOTECHNOLOGY, 2010, 21 (41)

[5] Electric-field-induced submicrosecond resistive switching [J].

Das, N. ;

Tsui, S. ;

Xue, Y. Y. ;

Wang, Y. Q. ;

Chu, C. W. .

PHYSICAL REVIEW B, 2008, 78 (23)

[6]

Erokhin V., 2010, Nano Communication Networks, V1, P108, DOI DOI 10.1016/J.NANCOM.2010.05.002

[7] Learning Abilities Achieved by a Single Solid-State Atomic Switch [J].

Hasegawa, Tsuyoshi ;

Ohno, Takeo ;

Terabe, Kazuya ;

Tsuruoka, Tohru ;

Nakayama, Tomonobu ;

Gimzewski, James K. ;

Aono, Masakazu .

ADVANCED MATERIALS, 2010, 22 (16) :1831-+

[8] Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films [J].

Kim, Kyung Min ;

Choi, Byung Joon ;

Shin, Yong Cheol ;

Choi, Seol ;

Hwang, Cheol Seong .

APPLIED PHYSICS LETTERS, 2007, 91 (01)

[9]

Kwon DH, 2010, NAT NANOTECHNOL, V5, P148, DOI [10.1038/NNANO.2009.456, 10.1038/nnano.2009.456]

[10] Influence of electrical field dependent depletion at metal-polymer junctions on resistive switching of poly(N-vinylcarbazole) (PVK)-based memory devices [J].

Lai, Pei Ying ;

Chen, J. S. .

ORGANIC ELECTRONICS, 2009, 10 (08) :1590-1595

← 1 2 3 →