RF Analysis of MEMS Shunt Capacitive Switch with Gold and Aluminium Beam

被引:0
作者
Agarwal, Saurabh [1 ]
Kumar, Mithlesh [1 ]
Guha, Koushik [1 ]
Baishya, Srimanta [1 ]
机构
[1] NIT Silchar, Dept Elect & Commun Engn, Silchar 788010, Assam, India
来源
2015 INTERNATIONAL CONFERENCE ON ADVANCES IN COMPUTER ENGINEERING AND APPLICATIONS (ICACEA) | 2015年
关键词
Radio Frequency Micro electrelectro mechanical systems (MEMS); Capacitive Switch; CapacitanceRatio;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
In a practical MEMS switch, there is a gap between the beam and the signals lines. Based on this, a study on frequency response starting from dc to radio frequency for Gold and Aluminium is carried out. Study reveals that the pull-in voltage and capacitance ratio for Gold are 13.8 V and 88.3, respectively; while for Aluminium these values are 11.4 V and 82.4, respectively. Also a detailed study of variation of insertion loss with frequency is also carried out. The insertion and isolation losses with gold as beam layer are -1.42 and 40.4 dB, respectively, at radio frequency, while the same losses for Aluminium as beam layer are -1.19 and 36.1 dB, respectively at the same frequency.
引用
收藏
页码:267 / 271
页数:5
相关论文
共 50 条
[31]   ANN Based Inverse Modeling of RF MEMS Capacitive Switches [J].
Marinkovic, Zlatica ;
Ciric, Tomislav ;
Kim, Teayoung ;
Vietzorreck, Larissa ;
Pronic-Rancic, Olivera ;
Milijic, Marija ;
Markovic, Vera .
2013 11TH INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS IN MODERN SATELLITE, CABLE AND BROADCASTING SERVICES (TELSIKS), VOLS 1 AND 2, 2013, :366-369
[32]   High-isolation lateral RF MEMS capacitive switch based on HfO2 dielectric for high frequency applications [J].
He, X. J. ;
Lv, Z. Q. ;
Liu, B. ;
Li, Z. H. .
SENSORS AND ACTUATORS A-PHYSICAL, 2012, 188 :342-348
[33]   Design and investigation of a novel variable reactance-based capacitive RF-MEMS switch with multifrequency operation for mmWave applications [J].
Kumari, Raj ;
Angira, Mahesh .
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2024, 119 (03) :417-430
[34]   Combined resistive-capacitive MEMS switch for advanced communication systems [J].
Morozov, M. O. ;
Uvarov, I. V. .
ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS, 2024, 17 (03) :186-190
[35]   Design and performance analysis of a low-pull-in-voltage RF MEMS shunt switch for millimeter-wave therapy, IoT, and 5G applications [J].
Kumar, P. Ashok ;
Karumuri, Srinivasa Rao ;
Kondavitee, Girija Sravani ;
Guha, Koushik .
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2022, 21 (02) :522-529
[36]   Time and voltage dependence of dielectric charging in RF MEMS capacitive switches [J].
Herfst, R. W. ;
Steeneken, P. G. ;
Schmitz, J. .
2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL, 2007, :417-+
[37]   Reliability of RF MEMS capacitive and ohmic switches for space redundancy configurations [J].
Andrea Lucibello ;
Romolo Marcelli ;
Emanuela Proietti ;
Giancarlo Bartolucci ;
Viviana Mulloni ;
Benno Margesin .
Microsystem Technologies, 2015, 21 :1903-1913
[38]   Effect of Parasitic Capacitance on RF MEMS Switch OFF/ON Ratio [J].
Bansal, Deepak ;
Mehta, Khushbu ;
Bajpai, Anuroop ;
Kumar, Amit ;
Kumar, Prem ;
Rangra, Kamaljit .
TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2019, 20 (02) :113-117
[39]   Development of an amorphous diamond (a-D) RF MEMS switch [J].
Webster, JR ;
Dyck, CW ;
Friedmann, TA ;
Sullivan, JP ;
Nordquist, CD ;
Carton, AJ ;
Kraus, GM ;
Schmidt, GD .
MEMS/MOEMS COMPONENTS AND THEIR APPLICATIONS, 2004, 5344 :71-78
[40]   Effect of Parasitic Capacitance on RF MEMS Switch OFF/ON Ratio [J].
Deepak Bansal ;
Khushbu Mehta ;
Anuroop Bajpai ;
Amit Kumar ;
Prem Kumar ;
Kamaljit Rangra .
Transactions on Electrical and Electronic Materials, 2019, 20 :113-117