Assessment of the composition of Silicon-Rich Oxide films for photovoltaic applications by optical techniques

被引：1

作者：

Morgano, M. ^{[1
]}

Zhang, T. ^{[2
]}

Perez-Wurfl, I. ^{[2
]}

Binetti, S. ^{[1
]}

Acciarri, M. ^{[1
]}

Conibeer, G. ^{[2
]}

机构：

[1] Univ Milano Bicocca, Dept Mat Sci, Milano Bicocca Solar Energy Res Ctr MIB SOLAR, Via Cozzi 53, I-20125 Milan, Italy

[2] Univ New S Wales, ARC Photovolta Ctr Excellence, Sydney, NSW 2052, Australia

来源：

EUROPEAN MATERIALS RESEARCH SOCIETY CONFERENCE SYMPOSIUM: ADVANCED INORGANIC MATERIALS AND CONCEPTS FOR PHOTOVOLTAICS | 2011年 / 10卷

关键词：

Quantum Dots; Photovoltaics; Silicon; Oxide; Tandem Cell; SRO;

D O I：

10.1016/j.egypro.2011.10.147

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The deposition of sub-stoichiometric silicon rich oxide (SRO) is the first step to obtain well ordered silicon Quantum Dots (QDs) in a dielectric matrix. This structure is used also for third generation photovoltaic devices operating in a tandem architecture. A precise control and assessment of the stoichiometry of these films is crucial to tune the electrical and optical properties of the device. In this paper we discuss two optical techniques to assess the composition of such films and we compare their results. (C) 2011 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of the Organizers of European Materials Research Society (EMRS) Conference: Symposium on Advanced Inorganic Materials and Concepts for Photovoltaics.

引用

页数：5

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