Performance characterization of gallium nitride HEMT cascode switch for power conditioning applications

被引：23

作者：

Chou, Po-Chien ^{[1
]}

Cheng, Stone ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mech Engn, Hsinchu 300, Taiwan

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2015年 / 198卷

关键词：

GaN cascode; HEMT; DC-DC conversion; High voltage; Power semiconductor device; GAN HEMT; BOOST CONVERTER; OPERATION;

D O I：

10.1016/j.mseb.2015.04.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A hybrid cascaded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN MIS-HEMT cascoded with an integrated power MOSFET and a SBD. The normally-off cascade circuit provides a maximum drain current of 14.6 A and a blocking capability of 600 V. Analysis of 200 V/1 A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC SBD are also demonstrated. Finally, a 48-to-96V boost converter is used to evaluate the benefit of GaN cascade switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：43 / 50

页数：8

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