Thermal modeling of GaAs-based semiconductor disk lasers

被引：3

作者：

Zhang, Peng ^{[1
,2
]}

Song, Yan Rong ^{[3
]}

Men, Yan Bin ^{[4
]}

Dai, Te Li ^{[1
,2
]}

Liang, Yi Ping ^{[1
,2
]}

Fan, Si Qiang ^{[1
,2
]}

机构：

[1] Chongqing Normal Univ, Coll Phys & Elect Engn, Chongqing 400047, Peoples R China

[2] Chongqing Normal Univ, Chongqing High Educ Key Lab Opt Engn, Chongqing 400047, Peoples R China

[3] Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China

[4] Hebei Normal Univ, Coll Phys Sci & Informat Engn, Shijiazhuang 050016, Peoples R China

来源：

OPTIK | 2012年 / 123卷 / 07期

基金：

中国国家自然科学基金;

关键词：

SDLs; Temperature rise; Heat flux; Temperature gradient; SURFACE-EMITTING LASERS; FINITE-ELEMENT-ANALYSIS; CIRCULAR TEM00 BEAMS; HIGH-POWER; ABSORPTION SPECTROSCOPY; TRANSVERSE-MODE; INTRACAVITY; MANAGEMENT; OPERATION; DESIGN;

D O I：

10.1016/j.ijleo.2011.06.007

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Thermal characteristics including the temperature, the heat flux, and the temperature gradient of GaAs-based semiconductor disk lasers (SDLs) under various conditions are modeled using the finite element method. The effects of the substrate thickness, the pump spot radius, the heatspreader, and the pump power on the thermal properties of laser are simulated, and the maximum temperature rise in active region is highlighted. Numerical analysis predicts that SiC is an ideal substitute for diamond as a heatspreader. Instead of the sophisticated completely-etched substrate, the use of a high-thermal-conductivity heatspreader along with partly-etched substrate can provide sufficient thermal management to the laser. (C) 2011 Elsevier GmbH. All rights reserved.

引用

页码：629 / 633

页数：5

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