Graphene/semi-insulating single crystal CdTe Schottky-type heterojunction X- and γ-Ray Radiation Detectors

被引：24

作者：

Brus, V. V. ^{[1
,2
]}

Maslyanchuk, O. L. ^{[1
]}

Solovan, M. M. ^{[1
]}

Maryanchuk, P. D. ^{[1
]}

Fodchuk, I. ^{[1
]}

Gnatyuk, V. A. ^{[3
,4
]}

Vakhnyak, N. D. ^{[3
]}

Melnychuk, S. V. ^{[1
]}

Aoki, T. ^{[4
]}

机构：

[1] Chernivtsi Natl Univ, Inst Phys Engn & Comp Sci, Kotsubynskiy 2, UA-58002 Chernovtsy, Ukraine

[2] Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Silizium Photovolta, Kekulestr 5, D-12489 Berlin, Germany

[3] Natl Acad Sci Ukraine, VE Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine

[4] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan

来源：

SCIENTIFIC REPORTS | 2019年 / 9卷 / 1期

关键词：

POLARIZATION; CDZNTE;

D O I：

10.1038/s41598-018-37637-w

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We developed a new concept of X- and gamma-ray radiation semiconductor detectors based on a large area graphene/semi-insulating single crystal CdTe Schottky-type heterojunction. These two terminal electronic devices can be easily fabricated by forming a Van der Waals contact between large area chemical vapor deposited graphene and CdTe substrates in air and at room temperature. This approach significantly reduces the fabrication cost and improves the reproducibility and stability of electrical properties. A detailed analysis of their AC and DC electrical properties was carried out in order to determine the width of the space charge region and dominant charge transport mechanisms at reverse bias. The unoptimized graphene/CdTe heterojunction detectors exhibited a promising spectral resolution of Am-241 (59 keV) and Cs-137 (662 keV) isotope radiation at room temperature.

引用

页数：8

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