Semiconductor optoelectronic devices

[1] ANALYSIS OF GAIN IN DETERMINING T-0 IN 1.3 MU-M SEMICONDUCTOR-LASERS [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) : 250 - 263

[2] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J]. ELECTRONICS LETTERS, 1986, 22 (05) : 249 - 250

[3] ANALYSIS AND DESIGN OF LOW-DIMENSIONAL STRUCTURES AND DEVICES USING STRAIN .1. HYDROSTATIC-PRESSURE EFFECTS [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (12) : 1194 - 1201

[4] THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L621 - L624

[5] Hydrostatic pressure dependence of the threshold current in 1.5 mu m strained quantum well lasers [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 198 (01): : 381 - 388

[6] Agrawal G, 1986, LONG WAVELENGTH SEMI

[7] AGRAWAL GP, 1992, WILEY SERIES MICROWA

[8] IMPACT IONIZATION IN GAAS - DISTRIBUTION OF FINAL ELECTRON-STATES DETERMINED FROM HYDROSTATIC-PRESSURE MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1995, 67 (22) : 3304 - 3306

[9] ''Universal'' dependence of avalanche breakdown on bandstructure: Choosing materials for high-power devices [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B): : 1529 - 1542

[10] Allam J, 1996, HOT CARRIERS IN SEMICONDUCTORS, P343

[1] ANALYSIS OF GAIN IN DETERMINING T-0 IN 1.3 MU-M SEMICONDUCTOR-LASERS [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) : 250 - 263

[2] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J]. ELECTRONICS LETTERS, 1986, 22 (05) : 249 - 250

[3] ANALYSIS AND DESIGN OF LOW-DIMENSIONAL STRUCTURES AND DEVICES USING STRAIN .1. HYDROSTATIC-PRESSURE EFFECTS [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (12) : 1194 - 1201

[4] THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L621 - L624

[5] Hydrostatic pressure dependence of the threshold current in 1.5 mu m strained quantum well lasers [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 198 (01): : 381 - 388

[6] Agrawal G, 1986, LONG WAVELENGTH SEMI

[7] AGRAWAL GP, 1992, WILEY SERIES MICROWA

[8] IMPACT IONIZATION IN GAAS - DISTRIBUTION OF FINAL ELECTRON-STATES DETERMINED FROM HYDROSTATIC-PRESSURE MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1995, 67 (22) : 3304 - 3306

[9] ''Universal'' dependence of avalanche breakdown on bandstructure: Choosing materials for high-power devices [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B): : 1529 - 1542

[10] Allam J, 1996, HOT CARRIERS IN SEMICONDUCTORS, P343