Spatial variation of the two-dimensional electron gas density induced by an increasing Hall electric field

被引:2
|
作者
Baskin, I. [1 ]
Ashkinadze, B. M. [1 ]
Cohen, E. [1 ]
Belkov, V. V. [2 ]
Pfeiffer, L. N. [3 ]
Umansky, V. [4 ]
机构
[1] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel
[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[4] Weizmann Inst Sci, Braun Ctr Submicron Res, Rehovot, Israel
基金
俄罗斯基础研究基金会;
关键词
QUANTUM-WELLS; HETEROSTRUCTURES; DISTRIBUTIONS;
D O I
10.1103/PhysRevB.84.245320
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The local properties of a high-mobility, two-dimensional electron gas (2DEG) subjected to an increasing Hall electric field are studied by imaging photoluminescence spectroscopy. It is observed that as the Hall electric field increases, the distribution of a 2DEG density across the sample becomes spatially nonuniform. This nonuniformity is associated with the "gating effect" of the Hall electric field that is screened by low-mobility charges accumulating in the layers parallel to the 2DEG. We consider two mechanisms to explain the 2DEG density redistribution induced by the Hall electric field. The first involves in-plane electron transport that results in a linear 2DEG density variation across the Hall bar. The second is activated at a high Hall voltage (> 50 mV) and involves vertical electron tunneling out of the 2DEG layer. We conclude that the 2DEG density redistribution can affect the nonlinear magnetotransport phenomena recently studied in GaAs/AlxGa1-xAs heterostructures containing a high-mobility 2DEG.
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页数:6
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