1064 nm InGaAsP multi-junction laser power converters

被引：26
作者：
Yin, Jiajing [1 ,2 ]
Sun, Yurun [1 ]
Yu, Shuzhen [1 ]
Zhao, Yongming [1 ]
Li, Rongwei [1 ]
Dong, Jianrong [1 ]
机构：
[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nano Devices & Applicat, Suzhou 215123, Peoples R China
[2] Univ Sci & Technol China, Nano Sci & Technol Inst, Hefei 230026, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2020年 / 41卷 / 06期
基金：
中国国家自然科学基金;
关键词：
InGaAsP; multi-junction laser power converter; conversion efficiency; PHOTOVOLTAIC CONVERTERS; GAAS; EFFICIENCY; JUNCTIONS; CELL;
D O I：
10.1088/1674-4926/41/6/062303
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Laser photovoltaic devices converting 1064 nm light energy into electric energy present a promising prospect in wireless energy transmission due to the commercial availability of high power 1064 nm lasers with very small divergence. Besides their high conversion efficiency, a high output voltage is also expected in a laser energy transmission system. Meanwhile, 1064 nm InGaAsP multi-junction laser power converters have been developed using p(+)-InGaAs/n(+)-InGaAs tunnel junctions to connect sub-cells in series to obtain a high output voltage. The triple-junction laser power converter structures are grown on p-type InP substrates by metal-organic chemical vapor deposition (MOCVD), and InGaAsP laser power converters are fabricated by conventional photovoltaic device processing. The room-temperatureI-Vmeasurements show that the 1 x 1 cm(2)triple-junction InGaAsP laser power converters demonstrate a conversion efficiency of 32.6% at a power density of 1.1 W/cm(2), with an open-circuit voltage of 2.16 V and a fill factor of 0.74. In this paper, the characteristics of the laser power converters are analyzed and ways to improve the conversion efficiency are discussed.
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页数：5
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