Room-temperature silicon band-edge photoluminescence enhanced by spin-coated sol-gel films

被引：12

作者：

Abedrabbo, S. ^{[1
,2
]}

Lahlouh, B. ^{[2
]}

Shet, S. ^{[3
]}

Fiory, A. T. ^{[1
]}

机构：

[1] New Jersey Inst Technol, Dept Phys, Newark, NJ 07901 USA

[2] Univ Jordan, Dept Phys, Amman 11942, Jordan

[3] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

SCRIPTA MATERIALIA | 2011年 / 65卷 / 09期

关键词：

Photoluminescence; Thin films; Semiconductor silicon; Sol-gel materials; LIGHT-EMISSION; HEAT-TREATMENT; LUMINESCENCE; DEPOSITION;

D O I：

10.1016/j.scriptamat.2011.07.025

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spin-coated with Er-doped (6 at.%) silica-gel films (0.13 mu m) and vacuum annealed; the strongest emission was obtained at similar to 700 degrees C. Comparative study of annealing behavior indicates an efficiency enhancement of two orders of magnitude. Emission from Er3+ ions in the silica film is used to gauge relative emission strengths. Mechanisms for inducing emission from silicon utilizing stresses in sol-gel films are discussed. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：767 / 770

页数：4

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