Growth Difference of amorphous silicon between plasma enhanced and catalytic CVD based on silicon heterojunction solar cells

被引：0

作者：

Zhang, Liping ^{[1
]}

Chen, Renfang ^{[1
]}

Wu, Zhuopeng ^{[1
]}

Sun, Chenguang ^{[2
]}

Meng, Fanying ^{[1
]}

Liu, Zhengxin ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[2] Trina Solar, State Key Lab PV Sci & Technol, Changzhou 213001, Jiangsu, Peoples R China

来源：

2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2017年

关键词：

amorphous silicon; passivation; growth difference; silicon heterojunction solar cells; HYDROGEN; FILMS; CRYSTALLIZATION; SPECTRA; OXIDE;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The microstructure evolution of hydrogenated amorphous silicon (a-Si:H) films, deposited by plasma enhanced (PE) and catalytic (CAT) chemical vapor deposition, have been investigated with the increasing thickness. It has been found that crystallites prone to present in the initial growth of a-Si: H deposited by CAT method, whose film has a more compact structure and stronger bonding energy than the film deposited by PE method. At a premise of same conversion efficiency, open circuit voltage and fill factor of the silicon heterojunction solar cells fabricated by CAT are higher than that of the cell fabricated by PE.

引用

页码：1241 / 1244

页数：4

共 32 条

[1] Impact of carrier recombination on fill factor for large area heterojunction crystalline silicon solar cell with 25.1% efficiency [J].

Adachi, Daisuke ;

Hernandez, Jose Luis ;

Yamamoto, Kenji .

APPLIED PHYSICS LETTERS, 2015, 107 (23)

[2] OPTICAL-PROPERTIES OF THIN-FILMS [J].

ASPNES, DE .

THIN SOLID FILMS, 1982, 89 (03) :249-262

[3]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[4] Role of hydrogen bonding environment in a-Si:H films for c-Si surface passivation [J].

Burrows, M. Z. ;

Das, U. K. ;

Opila, R. L. ;

De Wolf, S. ;

Birkmire, R. W. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2008, 26 (04) :683-687

[5] VIBRATIONAL-SPECTRA OF HYDROGEN IN SILICON AND GERMANIUM [J].

CARDONA, M .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 118 (02) :463-481

[6] Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment [J].

Descoeudres, A. ;

Barraud, L. ;

De Wolf, Stefaan ;

Strahm, B. ;

Lachenal, D. ;

Guerin, C. ;

Holman, Z. C. ;

Zicarelli, F. ;

Demaurex, B. ;

Seif, J. ;

Holovsky, J. ;

Ballif, C. .

APPLIED PHYSICS LETTERS, 2011, 99 (12)

[7] The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality [J].

Descoeudres, A. ;

Barraud, L. ;

Bartlome, R. ;

Choong, G. ;

De Wolf, Stefaan ;

Zicarelli, F. ;

Ballif, C. .

APPLIED PHYSICS LETTERS, 2010, 97 (18)

[8] Wide Gap Microcrystalline Silicon Oxide Emitter for a-SiOx:H/c-Si Heterojunction Solar Cells [J].

Ding, Kaining ;

Aeberhard, Urs ;

Smirnov, Vladimir ;

Hollaender, Bernd ;

Finger, Friedhelm ;

Rau, Uwe .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (12)

[9] Analysis of sub-stoichiometric hydrogenated silicon oxide films for surface passivation of crystalline silicon solar cells [J].

Einsele, Florian ;

Beyer, Wolfhard ;

Rau, Uwe .

JOURNAL OF APPLIED PHYSICS, 2012, 112 (05)

[10]

Fujiwara H, 2006, WORL CON PHOTOVOLT E, P1443

← 1 2 3 4 →