Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy

被引：4

作者：

Chen, CL

Chen, NF

Liu, LF

Li, YL

Wu, JL

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Mech, Natl Lab Micrograv, Beijing 100080, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 260卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

X-ray diffraction; liquid phase epitaxy; semiconducting ternary compounds;

D O I：

10.1016/j.jcrysgro.2003.08.022

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The Gal(1-x)Mn(x)Sb epilayer was prepared on the n-type GaSb substrate by liquid phase epitaxy. The structure of the Gal(1-x)Mn(x)Sb epilayer was analyzed by double-crystal X-ray diffraction. From the difference of the lattice constant between the GaSb substrate and the Ga1-xMnxSb epilayer, the Mn content in the Ga1-xMnxSb epilayer were calculated as x = 0.016. The elemental composition of Ga1-xMnxSb epilayer was analyzed by energy dispersive spectrometer. The carrier concentration was obtained by Hall measurement. The hole concentration in the Ga1-xMnxSb epilayer is 4.06 x 10(19)cm(-3). It indicates that most of the Mn atoms in Ga1-xMnxSb take the site of Ga, and play a role of acceptors. The current-voltage curve of the Ga1-xMnxSb/GaSb heterostructure was measured, and the rectifying effect is obvious. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：50 / 53

页数：4

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