One-step growth of graphene-carbon nanotube hybrid materials by chemical vapor deposition

被引：170
|
作者：
Dong, Xiaochen [4 ,5 ]
Li, Bing [3 ]
Wei, Ang [4 ,5 ]
Cao, Xiehong [3 ]
Chan-Park, M. B. [1 ]
Zhang, Hua [3 ]
Li, Lain-Jong [2 ]
Huang, Wei [4 ,5 ]
Chen, Peng [1 ]
机构：
[1] Nanyang Technol Univ, Sch Chem & Biomed Engn, Singapore 637459, Singapore
[2] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan
[3] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[4] NUPT, KLOEID, Nanjing 210046, Peoples R China
[5] NUPT, IAM, Nanjing 210046, Peoples R China
来源：
CARBON | 2011年 / 49卷 / 09期
基金：
新加坡国家研究基金会; 美国国家科学基金会;
关键词：
SINGLE-LAYER GRAPHENE; CATALYST-FREE GROWTH; LARGE-AREA; FILMS; OXIDE; LONG;
D O I：
10.1016/j.carbon.2011.03.009
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Graphene-carbon nanotube (CNT) hybrid materials were synthesized by simple one-step chemical vapor deposition (CVD) using ethanol as precursor. On a copper foil decorated with silicon nanparticles (Si NPs), a graphene film grows uniformly on the substrate while CNTs sprout out from Si NPs to form a network on top. The density of CNTs can be controlled by the CVD growth temperature. As measured by scanning and transmission electron microscopy, the obtained CNTs exhibit bamboo-like multiple-wall structures. Electrical characterization shows that the graphene-CNT hybrids exhibit p-type field-effect characteristics and a significantly higher conductivity compared to a CVD grown pure graphene film. (C) 2011 Published by Elsevier Ltd.
引用
收藏
页码：2944 / 2949
页数：6
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