The effect of substrate temperature on the physical properties of tantalum oxide thin films grown by reactive radio-frequency sputtering

被引:12
作者
Cheng, HE [1 ]
Mao, CT [1 ]
机构
[1] S Taiwan Univ Technol, Dept Elect Engn, Tainan 701, Taiwan
关键词
oxides; thin films; sputtering; x-ray diffraction; defects;
D O I
10.1016/j.materresbull.2003.08.003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films of TaOx were deposited on Si(1 0 0) by radio-frequency magnetron sputtering at substrate temperatures of 25, 100, 200, 300, 400, and 500 degreesC. The properties of TaOx thin films deposited with different oxygen-to-argon gas ratios and substrate temperatures were evaluated. The results show that the films with lowest leakage current density were obtained at ambient temperature with an oxygen mixture ratio (OMR) of 60% and the oxygen-to-tantalum ratio has a minimum with increasing deposition substrate temperature. From the current-voltage (I-V) characteristics of the TaOx thin films as a function of deposition substrate temperature, we found that the leakage current density in the TaOx thin films increases with increasing deposition substrate temperature. The higher leakage current density in the TaOx films is correlated to the oxygen deficiency in TaOx films and crystallization at higher deposition temperature. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1841 / 1849
页数:9
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