Optical conductivity of bismuth-based topological insulators

被引:86
作者
Di Pietro, P. [1 ,2 ]
Vitucci, F. M. [1 ,2 ]
Nicoletti, D. [3 ]
Baldassarre, L. [4 ]
Calvani, P. [1 ,2 ]
Cava, R. [5 ]
Hor, Y. S. [5 ]
Schade, U. [6 ]
Lupi, S. [2 ,7 ]
机构
[1] Univ Roma La Sapienza, CNR SPIN, I-00185 Rome, Italy
[2] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy
[3] Univ Hamburg, Max Planck Res Dept Struct Dynam, Ctr Free Electron Laser Sci, D-22607 Hamburg, Germany
[4] Sincrotrone Trieste, I-34012 Trieste, Italy
[5] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA
[6] Berliner Elektronenspeicherring Gesell Synchrotro, D-12489 Berlin, Germany
[7] Univ Roma La Sapienza, CNR IOM, I-00185 Rome, Italy
基金
美国国家科学基金会;
关键词
SINGLE DIRAC CONE; PHONONS; SB2TE3; BI2SE3; BI2TE3;
D O I
10.1103/PhysRevB.86.045439
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The optical conductivity sigma(1)(omega) and the spectral weight SW of four topological insulators with increasing chemical compensation (Bi2Se3, Bi2Se2Te, Bi2-xCaxSe3, and Bi2Te2Se) have been measured from 5 to 300 K and from subterahertz to visible frequencies. The effect of compensation is clearly observed in the infrared spectra through the suppression of an extrinsic Drude term and the appearance of strong absorption peaks that we assign to electronic transitions among localized states. From the far-infrared spectral weight SW of the most compensated sample (Bi2Te2Se), one can estimate a density of charge carriers on the order of 10(17)/cm(3) in good agreement with transport data. Those results demonstrate that the low-energy electrodynamics in single crystals of topological insulators, even at the highest degree of compensation presently achieved, is still influenced by three-dimensional charge excitations.
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页数:5
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